000 00440pam a2200157a 44500
008 160408b1970 xxu||||| |||| 00| 0 eng d
082 _a621.38152
_bSi88d
100 _aSittig, Marshall
245 1 _aDOPING AND SEMICONDUCTOR JUNCTION FORMATION
260 _aNew Jersey
_bNoyes Developments
_c1970
300 _a318
440 _aElectronics Materials Review
_vNo. 4
650 _aSemiconductors
964 _gCIRC
997 _aA8240 s C
999 _c242802
_d242802