| 000 | 00506pam a2200193a 44500 | ||
|---|---|---|---|
| 008 | 160408b2003 xxu||||| |||| 00| 0 eng d | ||
| 020 | _a1580533612 | ||
| 082 |
_a621.381528 _bC864S |
||
| 100 | _aCressler,John D. | ||
| 245 | 1 | _aSILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS | |
| 260 |
_a _bArtech House, Boston _c2003 |
||
| 300 | _axviii,570 | ||
| 650 | _aBipolar Transistors | ||
| 650 | _aSilicon | ||
| 650 | _aGermanium | ||
| 700 | _aNiu,Guofu | ||
| 964 | _gCIRC | ||
| 997 | _aA146256 C | ||
| 999 |
_c346283 _d346283 |
||