000 00549pam a2200181a 44500
008 160408b2005 xxu||||| |||| 00| 0 eng d
020 _a3540241639
082 _a621.38152
_bF417O
100 _aOkuyama,Masanori
245 1 _aFERROELECTRIC THIN FILMS
_cBASIC PROPERTIES AND DEVICE PHYSICS FOR MEMORY APPLICATIONS
260 _a
_bSpringer-Verlag, Berlin
_c2005
300 _axiii,244
440 _aTopics In Applied Physics
_v
650 _aFerroelectric Thin Films
700 _aIshibashi,Yoshihiro
964 _gCIRC
997 _aA153230 C
999 _c353092
_d353092