000 | 00560pam a2200169a 44500 | ||
---|---|---|---|
008 | 160408b2009 xxu||||| |||| 00| 0 eng d | ||
020 | _a9780470824078 | ||
040 | _aIIT, Kanpur | ||
082 |
_a621.395 _bK45t |
||
100 | _aKer, Ming-Dou | ||
245 | 1 |
_aTransient-induced latchup in CMOS integrated circuits _cMing-Dou Ker and Sheng-Fu Hsu |
|
260 |
_aSingapore _bJohn Wiley & Sons _c2009 |
||
300 | _axiii, 249p | ||
650 | _aMetal oxide semiconductors, complimentary defects | ||
700 | _aHsu, Sheng-Fu | ||
997 | _aA166087 C | ||
999 |
_c364688 _d364688 |