| 000 | 00690 a2200193 4500 | ||
|---|---|---|---|
| 082 |
_a621.38173 _bN213p |
||
| 100 |
_a _d |
||
| 245 | 1 |
_aPROCESS AND DEVICE SIMULATION FOR MOS-VLSI CIRCUITS _cNATO ADVANCED STUDY INSTITUTE ON PROCESS AND DEVICE SIMULATION FOR MOS-VLSI CIRCUITS (1982 : URBNO) |
|
| 260 |
_aBoston _bMartinus Nijhoff _c1983 |
||
| 300 | _axii,619,,,,, | ||
| 440 |
_aNato Asi Series. Series E _v |
||
| 650 | _aIntegrated Circuits -- Congresses | ||
| 650 | _aVery Larg Scale Integration -- Simulation Methods -- Congresses | ||
| 650 | _aMetal Oxide Semi-Conductors -- Congresses | ||
| 700 | _aANTOGNETTI, PAOLO | ||
| 906 | _h1982 | ||
| 964 | _gCIRC | ||
| 997 | _aA79634 s C | ||
| 999 |
_c470604 _d470604 |
||