000 | 01597 a2200229 4500 | ||
---|---|---|---|
020 | _a9780081021392 | ||
040 | _cIIT Kanpur | ||
041 | _aeng | ||
082 |
_a537.6 _bC738 |
||
245 |
_aCMOS past, present and future _cHenry H. Radamson ...[et al.] |
||
260 |
_bWoodhead Publishing _c2018 _aDuxford |
||
300 | _avii, 263p | ||
440 | _aWoodhead publishing series in electronic and optical materials | ||
520 | _aCMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends. The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements. | ||
650 | _aSemiconductors | ||
650 | _aMetal oxide semiconductors, Complementary | ||
700 | _aRadamson, Henry H. | ||
700 | _aLuo, Jun | ||
700 | _aSimoen, Eddy | ||
700 | _aZhao, Chao | ||
942 | _cBK | ||
999 |
_c559418 _d559418 |